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rt-thread/bsp/stm32f429-apollo/drivers/drv_nand.c

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/*
* File : drv_nand.c
* This file is part of RT-Thread RTOS
* COPYRIGHT (C) 2008 - 2012, RT-Thread Development Team
*
* The license and distribution terms for this file may be
* found in the file LICENSE in this distribution or at
* http://www.rt-thread.org/license/LICENSE
*
* Change Logs:
* Date Author Notes
* 2017-04-10 lizhen9880 the first version
*/
#include "drv_nand.h"
#include <rtdevice.h>
#include <string.h>
#ifdef RT_USING_NFTL
#include <nftl.h>
#endif
#define NAND_DEBUG rt_kprintf
/* nandflash confg */
#define PAGES_PER_BLOCK 64
#define PAGE_DATA_SIZE 2048
#define PAGE_OOB_SIZE 64
#define ECC_SIZE 4
#define SET_NAND_CMD(_c) do{*(volatile rt_uint8_t*)(NAND_ADDRESS|NAND_CMD) = _c;}while(0)
#define SET_NAND_ADD(_a) do{*(volatile rt_uint8_t*)(NAND_ADDRESS|NAND_ADDR) = _a;}while(0)
#define SET_NAND_DAT(_d) do{*(volatile rt_uint8_t*)NAND_ADDRESS = _d;}while(0)
#define GET_NAND_DAT(_d) do{_d = *(volatile rt_uint8_t*)NAND_ADDRESS;}while(0)
static struct stm32f4_nand _device;
static rt_bool_t read_status(rt_uint8_t cmd);
NAND_HandleTypeDef NAND_Handler; //NAND FLASH句柄
//NAND延时
void NAND_Delay(volatile rt_uint32_t i)
{
while(i>0)i--;
}
//等待RB信号为某个电平
//rb:0,等待RB==0
// 1,等待RB==1
//返回值:0,成功
// 1,超时
rt_uint8_t NAND_WaitRB(volatile rt_uint8_t rb)
{
volatile rt_uint16_t time=0;
while(time<10000)
{
time++;
if(NAND_RB==rb)
{
// NAND_DEBUG("time:%d/%d R/B:%d\n",time,10000,rb);
return 0;
}
}
// NAND_DEBUG("timeOUT\n");
return 1;
}
//读NAND状态
//返回值:NAND状态值
//bit0:0,成功;1,错误(编程/擦除/READ)
//bit6:0,Busy;1,Ready
rt_uint8_t NAND_ReadStatus(void)
{
volatile rt_uint8_t data=0;
SET_NAND_CMD(NAND_READSTA);//发送读状态命令
data++;data++;data++;data++;data++; //加延时,防止-O2优化,导致的错误.
data=*(volatile rt_uint8_t*)NAND_ADDRESS; //读取状态值
return data;
}
//等待NAND准备好
//返回值:NSTA_TIMEOUT 等待超时了
// NSTA_READY 已经准备好
static rt_uint8_t wait_for_ready(void)
{
rt_uint8_t status=0;
volatile rt_uint32_t time=0;
while(1) //等待ready
{
status=NAND_ReadStatus(); //获取状态值
if(status&NSTA_READY)break;
time++;
if(time>=0X1FFFF)return NSTA_TIMEOUT;//超时
}
return NSTA_READY;//准备好
}
//复位NAND
//返回值:0,成功;
// 其他,失败
static rt_uint8_t nand_reset(void)
{
SET_NAND_CMD(NAND_RESET);//复位NAND
if(wait_for_ready()==NSTA_READY)return 0;//复位成功
else return 1; //复位失败
}
//读取NAND FLASH的ID
//返回值:0,成功;
// 其他,失败
rt_uint8_t NAND_ModeSet(rt_uint8_t mode)
{
SET_NAND_CMD(NAND_FEATURE);
SET_NAND_ADD(0X01);
SET_NAND_DAT(mode);
SET_NAND_DAT(0);
SET_NAND_DAT(0);
SET_NAND_DAT(0);
if(wait_for_ready()==NSTA_READY)return 0;//成功
else return 1; //失败
}
//初始化NAND FLASH
void NAND_Init(void)
{
FMC_NAND_PCC_TimingTypeDef ComSpaceTiming,AttSpaceTiming;
NAND_Handler.Instance=FMC_NAND_DEVICE;
NAND_Handler.Init.NandBank=FMC_NAND_BANK3; //NAND挂在BANK3上
NAND_Handler.Init.Waitfeature=FMC_NAND_PCC_WAIT_FEATURE_DISABLE; //关闭等待特性
NAND_Handler.Init.MemoryDataWidth=FMC_NAND_PCC_MEM_BUS_WIDTH_8; //8位数据宽度
NAND_Handler.Init.EccComputation=FMC_NAND_ECC_DISABLE; //不使用ECC
NAND_Handler.Init.ECCPageSize=FMC_NAND_ECC_PAGE_SIZE_2048BYTE; //ECC页大小为2k
NAND_Handler.Init.TCLRSetupTime=0; //设置TCLR(tCLR=CLE到RE的延时)=(TCLR+TSET+2)*THCLK,THCLK=1/180M=5.5ns
NAND_Handler.Init.TARSetupTime=1; //设置TAR(tAR=ALE到RE的延时)=(TAR+TSET+2)*THCLK,THCLK=1/180M=5.5n。
ComSpaceTiming.SetupTime=2; //建立时间
ComSpaceTiming.WaitSetupTime=3; //等待时间
ComSpaceTiming.HoldSetupTime=2; //保持时间
ComSpaceTiming.HiZSetupTime=1; //高阻态时间
AttSpaceTiming.SetupTime=2; //建立时间
AttSpaceTiming.WaitSetupTime=3; //等待时间
AttSpaceTiming.HoldSetupTime=2; //保持时间
AttSpaceTiming.HiZSetupTime=1; //高阻态时间
HAL_NAND_Init(&NAND_Handler,&ComSpaceTiming,&AttSpaceTiming);
nand_reset(); //复位NAND
// delay_ms(100);
wait_for_ready();
NAND_ModeSet(4); //设置为MODE4,高速模式
}
//NAND FALSH底层驱动,引脚配置，时钟使能
//此函数会被HAL_NAND_Init()调用
void HAL_NAND_MspInit(NAND_HandleTypeDef *hnand)
{
GPIO_InitTypeDef GPIO_Initure;
__HAL_RCC_FMC_CLK_ENABLE(); //使能FMC时钟
__HAL_RCC_GPIOD_CLK_ENABLE(); //使能GPIOD时钟
__HAL_RCC_GPIOE_CLK_ENABLE(); //使能GPIOE时钟
__HAL_RCC_GPIOG_CLK_ENABLE(); //使能GPIOG时钟
//初始化PD6 R/B引脚
GPIO_Initure.Pin=GPIO_PIN_6;
GPIO_Initure.Mode=GPIO_MODE_INPUT; //输入
GPIO_Initure.Pull=GPIO_PULLUP; //上拉
GPIO_Initure.Speed=GPIO_SPEED_HIGH; //高速
HAL_GPIO_Init(GPIOD,&GPIO_Initure);
//初始化PG9 NCE3引脚
GPIO_Initure.Pin=GPIO_PIN_9;
GPIO_Initure.Mode=GPIO_MODE_AF_PP; //输入
GPIO_Initure.Pull=GPIO_NOPULL; //上拉
GPIO_Initure.Speed=GPIO_SPEED_HIGH; //高速
GPIO_Initure.Alternate=GPIO_AF12_FMC; //复用为FMC
HAL_GPIO_Init(GPIOG,&GPIO_Initure);
//初始化PD0,1,4,5,11,12,14,15
GPIO_Initure.Pin=GPIO_PIN_0|GPIO_PIN_1|GPIO_PIN_4|GPIO_PIN_5|\
GPIO_PIN_11|GPIO_PIN_12|GPIO_PIN_14|GPIO_PIN_15;
GPIO_Initure.Pull=GPIO_NOPULL;
HAL_GPIO_Init(GPIOD,&GPIO_Initure);
//初始化PE7,8,9,10
GPIO_Initure.Pin=GPIO_PIN_7|GPIO_PIN_8|GPIO_PIN_9|GPIO_PIN_10;
HAL_GPIO_Init(GPIOE,&GPIO_Initure);
}
//读NAND状态
//返回值:NAND状态值
//bit0:0,成功;1,错误(编程/擦除/READ)
//bit6:0,Busy;1,Ready
static rt_bool_t read_status(rt_uint8_t cmd)
{
volatile rt_uint8_t value=0;
SET_NAND_CMD(NAND_READSTA);//发送读状态命令
value++;value++;value++;value++;value++; //加延时,防止-O2优化,导致的错误.
value=*(volatile rt_uint8_t*)NAND_ADDRESS; //读取状态值
switch (cmd)
{
case NAND_WRITE0:
case NAND_ERASE1:
if (value & 0x01) /* Erase/Program failure(1) or pass(0) */
return (RT_FALSE);
else
return (RT_TRUE);
case NAND_AREA_TRUE1: /* bit 5 and 6, Read busy(0) or ready(1) */
return (RT_TRUE);
default:
break;
}
return (RT_FALSE);
}
static rt_err_t nand_MT29F4G08_readid(struct rt_mtd_nand_device *device)
{
rt_uint32_t id;
SET_NAND_CMD(NAND_READID); //发送读取ID命令
SET_NAND_ADD(0X00);
GET_NAND_DAT(_device.id[0]);//ID一共有5个字节
GET_NAND_DAT(_device.id[1]);
GET_NAND_DAT(_device.id[2]);
GET_NAND_DAT(_device.id[3]);
GET_NAND_DAT(_device.id[4]);
//镁光的NAND FLASH的ID一共5个字节，但是为了方便我们只取4个字节组成一个32位的ID值
//根据NAND FLASH的数据手册，只要是镁光的NAND FLASH，那么一个字节ID的第一个字节都是0X2C
//所以我们就可以抛弃这个0X2C，只取后面四字节的ID值。
id=((rt_uint32_t)_device.id[1])<<24|((rt_uint32_t)_device.id[2])<<16|((rt_uint32_t)_device.id[3])<<8|_device.id[4];
rt_kprintf("\nNAND ID: 0x%08X\n", id);
return RT_EOK;
}
static rt_err_t nand_datacorrect(uint32_t generatedEcc, uint32_t readEcc, uint8_t *data)
{
#define ECC_MASK28 0x0FFFFFFF /* 28 valid ECC parity bits. */
#define ECC_MASK 0x05555555 /* 14 ECC parity bits. */
rt_uint32_t count, bitNum, byteAddr;
rt_uint32_t mask;
rt_uint32_t syndrome;
rt_uint32_t eccP; /* 14 even ECC parity bits. */
rt_uint32_t eccPn; /* 14 odd ECC parity bits. */
syndrome = (generatedEcc ^ readEcc) & ECC_MASK28;
if (syndrome == 0)
return (RT_MTD_EOK); /* No errors in data. */
eccPn = syndrome & ECC_MASK; /* Get 14 odd parity bits. */
eccP = (syndrome >> 1) & ECC_MASK; /* Get 14 even parity bits. */
if ((eccPn ^ eccP) == ECC_MASK) /* 1-bit correctable error ? */
{
bitNum = (eccP & 0x01) |
((eccP >> 1) & 0x02) |
((eccP >> 2) & 0x04);
NAND_DEBUG("ECC bit %d\n",bitNum);
byteAddr = ((eccP >> 6) & 0x001) |
((eccP >> 7) & 0x002) |
((eccP >> 8) & 0x004) |
((eccP >> 9) & 0x008) |
((eccP >> 10) & 0x010) |
((eccP >> 11) & 0x020) |
((eccP >> 12) & 0x040) |
((eccP >> 13) & 0x080) |
((eccP >> 14) & 0x100) |
((eccP >> 15) & 0x200) |
((eccP >> 16) & 0x400) ;
data[ byteAddr ] ^= 1 << bitNum;
return RT_MTD_EOK;
}
/* Count number of one's in the syndrome. */
count = 0;
mask = 0x00800000;
while (mask)
{
if (syndrome & mask)
count++;
mask >>= 1;
}
if (count == 1) /* Error in the ECC itself. */
return RT_MTD_EECC;
return -RT_MTD_EECC; /* Unable to correct data. */
#undef ECC_MASK
#undef ECC_MASK24
}
static rt_err_t nand_MT29F4G08_readpage(struct rt_mtd_nand_device *device,
rt_off_t page,
rt_uint8_t *data,
rt_uint32_t data_len,
rt_uint8_t *spare,
rt_uint32_t spare_len)
{
rt_uint32_t index;
rt_uint32_t gecc, recc;
rt_uint8_t tmp[4];
rt_err_t result;
rt_uint32_t i;
page = page + device->block_start * device->pages_per_block;
if (page/device->pages_per_block > device->block_end)
{
return -RT_MTD_EIO;
}
result = RT_MTD_EOK;
rt_mutex_take(&_device.lock, RT_WAITING_FOREVER);
if (data && data_len)
{
SET_NAND_CMD(NAND_AREA_A); //发送地址
SET_NAND_ADD((rt_uint8_t)(0&0xFF));
SET_NAND_ADD((rt_uint8_t)(0>>8));
SET_NAND_ADD((rt_uint8_t)(page & 0xFF));
SET_NAND_ADD((rt_uint8_t)(page >> 8));
SET_NAND_ADD((rt_uint8_t)(page >> 16));
SET_NAND_CMD(NAND_AREA_TRUE1);
//下面两行代码是等待R/B引脚变为低电平，其实主要起延时作用的，等待NAND操作R/B引脚。因为我们是通过
//将STM32的NWAIT引脚(NAND的R/B引脚)配置为普通IO，代码中通过读取NWAIT引脚的电平来判断NAND是否准备
//就绪的。这个也就是模拟的方法，所以在速度很快的时候有可能NAND还没来得及操作R/B引脚来表示NAND的忙
//闲状态，就读取了R/B引脚,这个时候肯定会出错的，事实上确实是会出错!
NAND_WaitRB(0); //等待RB=0
//下面2行代码是真正判断NAND是否准备好的
NAND_WaitRB(1); //等待RB=1
FMC_NAND_ECC_Enable(NAND_Handler.Instance,FMC_NAND_BANK3);
for (i = 0; i < data_len; i ++)
{
GET_NAND_DAT(data[i]);
}
gecc = FMC_NAND_GetECC(NAND_Handler.Instance,(uint32_t*)&gecc,FMC_NAND_BANK3,10);
if (data_len == PAGE_DATA_SIZE)
{
for (index = 0; index < ECC_SIZE; index ++)
{
GET_NAND_DAT(tmp[index]);
}
if (spare && spare_len)
{
for (i = ECC_SIZE; i < spare_len; i ++)
{
GET_NAND_DAT(spare[i]);
}
rt_memcpy(spare, tmp , ECC_SIZE);
}
recc = (tmp[3] << 24) | (tmp[2] << 16) | (tmp[1] << 8) | tmp[0];
if (recc != 0xFFFFFFFF && gecc != 0)
result = nand_datacorrect(gecc, recc, data);
if (result != RT_MTD_EOK)
NAND_DEBUG("page: %d, gecc %X, recc %X>",page, gecc, recc);
goto _exit;
}
}
if (spare && spare_len)
{
SET_NAND_CMD(NAND_AREA_A); //发送地址
SET_NAND_ADD((rt_uint8_t)(PAGE_DATA_SIZE&0xFF));
SET_NAND_ADD((rt_uint8_t)(PAGE_DATA_SIZE>>8));
SET_NAND_ADD((rt_uint8_t)(page & 0xFF));
SET_NAND_ADD((rt_uint8_t)(page >> 8));
SET_NAND_ADD((rt_uint8_t)(page >> 16));
SET_NAND_CMD(NAND_AREA_TRUE1);
//下面两行代码是等待R/B引脚变为低电平，其实主要起延时作用的，等待NAND操作R/B引脚。因为我们是通过
//将STM32的NWAIT引脚(NAND的R/B引脚)配置为普通IO，代码中通过读取NWAIT引脚的电平来判断NAND是否准备
//就绪的。这个也就是模拟的方法，所以在速度很快的时候有可能NAND还没来得及操作R/B引脚来表示NAND的忙
//闲状态，就读取了R/B引脚,这个时候肯定会出错的，事实上确实是会出错!
NAND_WaitRB(0); //等待RB=0
//下面2行代码是真正判断NAND是否准备好的
NAND_WaitRB(1); //等待RB=1
for (i = 0; i < spare_len; i ++)
{
GET_NAND_DAT(spare[i]);
}
}
_exit:
rt_mutex_release(&_device.lock);
return (result);
}
static rt_err_t nand_MT29F4G08_writepage(struct rt_mtd_nand_device *device,
rt_off_t page,
const rt_uint8_t *data,
rt_uint32_t data_len,
const rt_uint8_t *spare,
rt_uint32_t spare_len)
{
rt_err_t result;
rt_uint32_t gecc;
rt_uint32_t i;
page = page + device->block_start * device->pages_per_block;
if (page/device->pages_per_block > device->block_end)
{
return -RT_MTD_EIO;
}
result = RT_MTD_EOK;
rt_mutex_take(&_device.lock, RT_WAITING_FOREVER);
if (data && data_len)
{
SET_NAND_CMD(NAND_WRITE0); //发送地址
SET_NAND_ADD((rt_uint8_t)(0&0xFF));
SET_NAND_ADD((rt_uint8_t)(0>>8));
SET_NAND_ADD((rt_uint8_t)(page & 0xFF));
SET_NAND_ADD((rt_uint8_t)(page >> 8));
SET_NAND_ADD((rt_uint8_t)(page >> 16));
FMC_NAND_ECC_Enable(NAND_Handler.Instance,FMC_NAND_BANK3);
for (i = 0; i < data_len; i ++)
{
SET_NAND_DAT(data[i]);
}
gecc = FMC_NAND_GetECC(NAND_Handler.Instance,(uint32_t*)&gecc,FMC_NAND_BANK3,10);
FMC_NAND_ECC_Disable(NAND_Handler.Instance,FMC_NAND_BANK3);
if (data_len == PAGE_DATA_SIZE)
{
SET_NAND_DAT((uint8_t)gecc);
SET_NAND_DAT((uint8_t)(gecc >> 8));
SET_NAND_DAT((uint8_t)(gecc >> 16));
SET_NAND_DAT((uint8_t)(gecc >> 24));
if (spare && spare_len)
{
for (i = ECC_SIZE; i < spare_len; i ++)
{
SET_NAND_DAT(spare[i]);
}
}
}
SET_NAND_CMD(NAND_WRITE_TURE1);
if(wait_for_ready()!=NSTA_READY)
{
nand_reset();
result = -RT_MTD_EIO;//失败
}
goto _exit;
}
if (spare && spare_len)
{
SET_NAND_CMD(NAND_WRITE0); //发送地址
SET_NAND_ADD((rt_uint8_t)(PAGE_DATA_SIZE&0xFF));
SET_NAND_ADD((rt_uint8_t)(PAGE_DATA_SIZE>>8));
SET_NAND_ADD((rt_uint8_t)(page & 0xFF));
SET_NAND_ADD((rt_uint8_t)(page >> 8));
SET_NAND_ADD((rt_uint8_t)(page >> 16));
if (spare && spare_len)
for (i = ECC_SIZE; i < spare_len; i ++)
{
SET_NAND_DAT(spare[i]);
}
SET_NAND_CMD(NAND_WRITE_TURE1);
if(wait_for_ready()!=NSTA_READY)
{
nand_reset();
result = -RT_MTD_EIO;//失败
}
}
_exit:
rt_mutex_release(&_device.lock);
return (result);
}
static rt_err_t nand_MT29F4G08_eraseblock(struct rt_mtd_nand_device *device,
rt_uint32_t block)
{
unsigned int blockPage;
rt_err_t result;
/* add the start blocks */
block = block + device->block_start;
blockPage = (block << 6);
result = RT_MTD_EOK;
rt_mutex_take(&_device.lock, RT_WAITING_FOREVER);
SET_NAND_CMD(NAND_ERASE0); //发送地址
SET_NAND_ADD((rt_uint8_t)blockPage);
SET_NAND_ADD((rt_uint8_t)(blockPage>>8));
SET_NAND_ADD((rt_uint8_t)(blockPage>>16));
SET_NAND_CMD(NAND_ERASE1);
if(wait_for_ready()!=NSTA_READY)
{
nand_reset();
result = -RT_MTD_EIO;//失败
}
rt_mutex_release(&_device.lock);
return result;
}
static rt_err_t nand_MT29F4G08_pagecopy(struct rt_mtd_nand_device *device,
rt_off_t src_page,
rt_off_t dst_page)
{
rt_err_t result = RT_MTD_EOK;
rt_uint32_t source_block=0,dest_block=0;
src_page = src_page + device->block_start * device->pages_per_block;
dst_page = dst_page + device->block_start * device->pages_per_block;
//判断源页和目的页是否在同一个plane中
source_block=src_page/device->pages_per_block;
dest_block=dst_page/device->pages_per_block;
if((source_block%2)!=(dest_block%2))return RT_MTD_ESRC; //不在同一个plane内
SET_NAND_CMD(NAND_MOVEDATA_CMD0);//发送命令0X00
SET_NAND_ADD((rt_uint8_t)(0&0xFF)); //发送源页地址
SET_NAND_ADD((rt_uint8_t)(0>>8));
SET_NAND_ADD((rt_uint8_t)(src_page & 0xFF));
SET_NAND_ADD((rt_uint8_t)(src_page >> 8));
SET_NAND_ADD((rt_uint8_t)(src_page >> 16));
SET_NAND_CMD(NAND_MOVEDATA_CMD1);//发送命令0X35
//下面两行代码是等待R/B引脚变为低电平，其实主要起延时作用的，等待NAND操作R/B引脚。因为我们是通过
//将STM32的NWAIT引脚(NAND的R/B引脚)配置为普通IO，代码中通过读取NWAIT引脚的电平来判断NAND是否准备
//就绪的。这个也就是模拟的方法，所以在速度很快的时候有可能NAND还没来得及操作R/B引脚来表示NAND的忙
//闲状态，结果我们就读取了R/B引脚,这个时候肯定会出错的，事实上确实是会出错!大家也可以将下面两行
//代码换成延时函数,只不过这里我们为了效率所以没有用延时函数。
result=NAND_WaitRB(0); //等待RB=0
if(result)return -RT_MTD_EIO; //超时退出
//下面2行代码是真正判断NAND是否准备好的
result=NAND_WaitRB(1); //等待RB=1
if(result)return -RT_MTD_EIO; //超时退出
SET_NAND_CMD(NAND_MOVEDATA_CMD2);//发送命令0X85
SET_NAND_ADD((rt_uint8_t)(0&0xFF)); //发送目的页地址
SET_NAND_ADD((rt_uint8_t)(0>>8));
SET_NAND_ADD((rt_uint8_t)(dst_page & 0xFF));
SET_NAND_ADD((rt_uint8_t)(dst_page >> 8));
SET_NAND_ADD((rt_uint8_t)(dst_page >> 16));
SET_NAND_CMD(NAND_MOVEDATA_CMD3);//发送命令0X10
if(wait_for_ready()!=NSTA_READY)
{
nand_reset();
return -RT_MTD_EIO;//失败
}
return RT_MTD_EOK;
}
static rt_err_t nand_MT29F4G08_checkblock(struct rt_mtd_nand_device* device, rt_uint32_t block)
{
return (RT_MTD_EOK);
}
static rt_err_t nand_MT29F4G08_markbad(struct rt_mtd_nand_device* device, rt_uint32_t block)
{
return (RT_MTD_EOK);
}
static const struct rt_mtd_nand_driver_ops ops =
{
nand_MT29F4G08_readid,
nand_MT29F4G08_readpage,
nand_MT29F4G08_writepage,
nand_MT29F4G08_pagecopy,
nand_MT29F4G08_eraseblock,
nand_MT29F4G08_checkblock,
nand_MT29F4G08_markbad,
};
static struct rt_mtd_nand_device _partition[1];
int nand_MT29F4G08_hw_init(void)
{
NAND_Init();
rt_mutex_init(&_device.lock, "nand", RT_IPC_FLAG_FIFO);
/* register nand0 */
_partition[0].page_size = PAGE_DATA_SIZE;
_partition[0].pages_per_block = PAGES_PER_BLOCK;
_partition[0].plane_num = 2;
_partition[0].oob_size = PAGE_OOB_SIZE;
_partition[0].oob_free = PAGE_OOB_SIZE - ((PAGE_DATA_SIZE) * 3 / 256);
_partition[0].block_start = 0;
_partition[0].block_end = 4095;
_partition[0].block_total = _partition[0].block_end - _partition[0].block_start;
_partition[0].ops = &ops;
rt_mtd_nand_register_device("nand0", &_partition[0]);
nand_MT29F4G08_readid(&_partition[0]);
return RT_EOK;
}
INIT_BOARD_EXPORT(nand_MT29F4G08_hw_init);
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