rt-thread/components/dfs/filesystems/uffs/flash/nand_ids.c

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/*
* drivers/mtd/nandids.c
*
* Copyright (C) 2002 Thomas Gleixner (tglx@linutronix.de)
*
* $Id: nand_ids.c,v 1.10 2004/05/26 13:40:12 gleixner Exp $
*
* This program is free software; you can redistribute it and/or modify
* it under the terms of the GNU General Public License version 2 as
* published by the Free Software Foundation.
*
*/
#include <rtdef.h>
#include "flash/nand.h"
/*
* Chip ID list
*
* name, ID, pagesize, chipsize in MegaByte, eraseblock size,options
*
* if 0, get this information from the extended chip ID
*/
struct nand_flash_dev nand_flash_ids[] =
{
{"NAND 1MiB 5V 8-bit", 0x6e, 256, 1, 0x1000, 0},
{"NAND 2MiB 5V 8-bit", 0x64, 256, 2, 0x1000, 0},
{"NAND 4MiB 5V 8-bit", 0x6b, 512, 4, 0x2000, 0},
{"NAND 1MiB 3,3V 8-bit", 0xe8, 256, 1, 0x1000, 0},
{"NAND 1MiB 3,3V 8-bit", 0xec, 256, 1, 0x1000, 0},
{"NAND 2MiB 3,3V 8-bit", 0xea, 256, 2, 0x1000, 0},
{"NAND 4MiB 3,3V 8-bit", 0xd5, 512, 4, 0x2000, 0},
{"NAND 4MiB 3,3V 8-bit", 0xe3, 512, 4, 0x2000, 0},
{"NAND 4MiB 3,3V 8-bit", 0xe5, 512, 4, 0x2000, 0},
{"NAND 8MiB 3,3V 8-bit", 0xd6, 512, 8, 0x2000, 0},
{"NAND 8MiB 1,8V 8-bit", 0x39, 512, 8, 0x2000, 0},
{"NAND 8MiB 3,3V 8-bit", 0xe6, 512, 8, 0x2000, 0},
{"NAND 8MiB 1,8V 16-bit", 0x49, 512, 8, 0x2000, NAND_BUSWIDTH_16},
{"NAND 8MiB 3,3V 16-bit", 0x59, 512, 8, 0x2000, NAND_BUSWIDTH_16},
{"NAND 16MiB 1,8V 8-bit", 0x33, 512, 16, 0x4000, 0},
{"NAND 16MiB 3,3V 8-bit", 0x73, 512, 16, 0x4000, 0},
{"NAND 16MiB 1,8V 16-bit", 0x43, 512, 16, 0x4000, NAND_BUSWIDTH_16},
{"NAND 16MiB 3,3V 16-bit", 0x53, 512, 16, 0x4000, NAND_BUSWIDTH_16},
{"NAND 32MiB 1,8V 8-bit", 0x35, 512, 32, 0x4000, 0},
{"NAND 32MiB 3,3V 8-bit", 0x75, 512, 32, 0x4000, 0},
{"NAND 32MiB 1,8V 16-bit", 0x45, 512, 32, 0x4000, NAND_BUSWIDTH_16},
{"NAND 32MiB 3,3V 16-bit", 0x55, 512, 32, 0x4000, NAND_BUSWIDTH_16},
{"NAND 64MiB 1,8V 8-bit", 0x36, 512, 64, 0x4000, 0},
{"NAND 64MiB 3,3V 8-bit", 0x76, 512, 64, 0x4000, 0},
{"NAND 64MiB 1,8V 16-bit", 0x46, 512, 64, 0x4000, NAND_BUSWIDTH_16},
{"NAND 64MiB 3,3V 16-bit", 0x56, 512, 64, 0x4000, NAND_BUSWIDTH_16},
{"NAND 128MiB 1,8V 8-bit", 0x78, 512, 128, 0x4000, 0},
{"NAND 128MiB 3,3V 8-bit", 0x79, 512, 128, 0x4000, 0},
{"NAND 128MiB 1,8V 16-bit", 0x72, 512, 128, 0x4000, NAND_BUSWIDTH_16},
{"NAND 128MiB 3,3V 16-bit", 0x74, 512, 128, 0x4000, NAND_BUSWIDTH_16},
{"NAND 256MiB 3,3V 8-bit", 0x71, 512, 256, 0x4000, 0},
/* {"NAND 512MiB 3,3V 8-bit", 0xDC, 512, 512, 0x4000, 0}, */
{"NAND 512MiB 3,3V 8-bit", 0xDC, 0, 512, 0, 0},
/* These are the new chips with large page size. The pagesize
* and the erasesize is determined from the extended id bytes
*/
/* 1 Gigabit */
{"NAND 128MiB 1,8V 8-bit", 0xA1, 0, 128, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 128MiB 3,3V 8-bit", 0xF1, 0, 128, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 128MiB 1,8V 16-bit", 0xB1, 0, 128, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
{"NAND 128MiB 3,3V 16-bit", 0xC1, 0, 128, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
/* 2 Gigabit */
{"NAND 256MiB 1,8V 8-bit", 0xAA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 256MiB 3,3V 8-bit", 0xDA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 256MiB 1,8V 16-bit", 0xBA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
{"NAND 256MiB 3,3V 16-bit", 0xCA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
/* 4 Gigabit */
{"NAND 512MiB 1,8V 8-bit", 0xAC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 512MiB 3,3V 8-bit", 0xDC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 512MiB 1,8V 16-bit", 0xBC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
{"NAND 512MiB 3,3V 16-bit", 0xCC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
/* 8 Gigabit */
{"NAND 1GiB 1,8V 8-bit", 0xA3, 0, 1024, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 1GiB 3,3V 8-bit", 0xD3, 0, 1024, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 1GiB 1,8V 16-bit", 0xB3, 0, 1024, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
{"NAND 1GiB 3,3V 16-bit", 0xC3, 0, 1024, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
/* 16 Gigabit */
{"NAND 2GiB 1,8V 8-bit", 0xA5, 0, 2048, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 2GiB 3,3V 8-bit", 0xD5, 0, 2048, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
{"NAND 2GiB 1,8V 16-bit", 0xB5, 0, 2048, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
{"NAND 2GiB 3,3V 16-bit", 0xC5, 0, 2048, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
/* Renesas AND 1 Gigabit. Those chips do not support extended id and have a strange page/block layout !
* The chosen minimum erasesize is 4 * 2 * 2048 = 16384 Byte, as those chips have an array of 4 page planes
* 1 block = 2 pages, but due to plane arrangement the blocks 0-3 consists of page 0 + 4,1 + 5, 2 + 6, 3 + 7
* Anyway JFFS2 would increase the eraseblock size so we chose a combined one which can be erased in one go
* There are more speed improvements for reads and writes possible, but not implemented now
*/
{"AND 128MiB 3,3V 8-bit", 0x01, 2048, 128, 0x4000, NAND_IS_AND | NAND_NO_AUTOINCR | NAND_4PAGE_ARRAY},
{RT_NULL,}
};
/*
* NAND Flash <20><><EFBFBD><EFBFBD><EFBFBD><EFBFBD><EFBFBD>Ҵ<EFBFBD><D2B4><EFBFBD>
*/
#define NAND_MFR_TOSHIBA 0x98
#define NAND_MFR_SAMSUNG 0xec
#define NAND_MFR_FUJITSU 0x04
#define NAND_MFR_NATIONAL 0x8f
#define NAND_MFR_RENESAS 0x07
#define NAND_MFR_STMICRO 0x20
/* <20><><EFBFBD><EFBFBD><EFBFBD><EFBFBD>ID<49>б<EFBFBD> */
struct nand_manufacturers nand_manuf_ids[] =
{
{NAND_MFR_TOSHIBA, "Toshiba"},
{NAND_MFR_SAMSUNG, "Samsung"},
{NAND_MFR_FUJITSU, "Fujitsu"},
{NAND_MFR_NATIONAL,"National"},
{NAND_MFR_RENESAS, "Renesas"},
{NAND_MFR_STMICRO, "ST Micro"},
{0x0, "Unknown"}
};