/* * Copyright (c) 2006-2018, RT-Thread Development Team * * SPDX-License-Identifier: Apache-2.0 * * Change Logs: * Date Author Notes * 2017-04-10 lizhen9880 the first version */ #include "drv_nand.h" #include #include #ifdef RT_USING_NFTL #include #endif #define NAND_DEBUG rt_kprintf /* nandflash confg */ #define PAGES_PER_BLOCK 64 #define PAGE_DATA_SIZE 2048 #define PAGE_OOB_SIZE 64 #define ECC_SIZE 4 #define SET_NAND_CMD(_c) do{*(volatile rt_uint8_t*)(NAND_ADDRESS|NAND_CMD) = _c;}while(0) #define SET_NAND_ADD(_a) do{*(volatile rt_uint8_t*)(NAND_ADDRESS|NAND_ADDR) = _a;}while(0) #define SET_NAND_DAT(_d) do{*(volatile rt_uint8_t*)NAND_ADDRESS = _d;}while(0) #define GET_NAND_DAT(_d) do{_d = *(volatile rt_uint8_t*)NAND_ADDRESS;}while(0) static struct stm32f4_nand _device; static rt_bool_t read_status(rt_uint8_t cmd); NAND_HandleTypeDef NAND_Handler; //NAND FLASH句柄 //NAND延时 void NAND_Delay(volatile rt_uint32_t i) { while(i>0)i--; } //等待RB信号为某个电平 //rb:0,等待RB==0 // 1,等待RB==1 //返回值:0,成功 // 1,超时 rt_uint8_t NAND_WaitRB(volatile rt_uint8_t rb) { volatile rt_uint16_t time=0; while(time<10000) { time++; if(NAND_RB==rb) { // NAND_DEBUG("time:%d/%d R/B:%d\n",time,10000,rb); return 0; } } // NAND_DEBUG("timeOUT\n"); return 1; } //读NAND状态 //返回值:NAND状态值 //bit0:0,成功;1,错误(编程/擦除/READ) //bit6:0,Busy;1,Ready rt_uint8_t NAND_ReadStatus(void) { volatile rt_uint8_t data=0; SET_NAND_CMD(NAND_READSTA);//发送读状态命令 data++;data++;data++;data++;data++; //加延时,防止-O2优化,导致的错误. data=*(volatile rt_uint8_t*)NAND_ADDRESS; //读取状态值 return data; } //等待NAND准备好 //返回值:NSTA_TIMEOUT 等待超时了 // NSTA_READY 已经准备好 static rt_uint8_t wait_for_ready(void) { rt_uint8_t status=0; volatile rt_uint32_t time=0; while(1) //等待ready { status=NAND_ReadStatus(); //获取状态值 if(status&NSTA_READY)break; time++; if(time>=0X1FFFF)return NSTA_TIMEOUT;//超时 } return NSTA_READY;//准备好 } //复位NAND //返回值:0,成功; // 其他,失败 static rt_uint8_t nand_reset(void) { SET_NAND_CMD(NAND_RESET);//复位NAND if(wait_for_ready()==NSTA_READY)return 0;//复位成功 else return 1; //复位失败 } //读取NAND FLASH的ID //返回值:0,成功; // 其他,失败 rt_uint8_t NAND_ModeSet(rt_uint8_t mode) { SET_NAND_CMD(NAND_FEATURE); SET_NAND_ADD(0X01); SET_NAND_DAT(mode); SET_NAND_DAT(0); SET_NAND_DAT(0); SET_NAND_DAT(0); if(wait_for_ready()==NSTA_READY)return 0;//成功 else return 1; //失败 } //初始化NAND FLASH void NAND_Init(void) { FMC_NAND_PCC_TimingTypeDef ComSpaceTiming,AttSpaceTiming; NAND_Handler.Instance=FMC_NAND_DEVICE; NAND_Handler.Init.NandBank=FMC_NAND_BANK3; //NAND挂在BANK3上 NAND_Handler.Init.Waitfeature=FMC_NAND_PCC_WAIT_FEATURE_DISABLE; //关闭等待特性 NAND_Handler.Init.MemoryDataWidth=FMC_NAND_PCC_MEM_BUS_WIDTH_8; //8位数据宽度 NAND_Handler.Init.EccComputation=FMC_NAND_ECC_DISABLE; //不使用ECC NAND_Handler.Init.ECCPageSize=FMC_NAND_ECC_PAGE_SIZE_2048BYTE; //ECC页大小为2k NAND_Handler.Init.TCLRSetupTime=0; //设置TCLR(tCLR=CLE到RE的延时)=(TCLR+TSET+2)*THCLK,THCLK=1/180M=5.5ns NAND_Handler.Init.TARSetupTime=1; //设置TAR(tAR=ALE到RE的延时)=(TAR+TSET+2)*THCLK,THCLK=1/180M=5.5n。 ComSpaceTiming.SetupTime=2; //建立时间 ComSpaceTiming.WaitSetupTime=3; //等待时间 ComSpaceTiming.HoldSetupTime=2; //保持时间 ComSpaceTiming.HiZSetupTime=1; //高阻态时间 AttSpaceTiming.SetupTime=2; //建立时间 AttSpaceTiming.WaitSetupTime=3; //等待时间 AttSpaceTiming.HoldSetupTime=2; //保持时间 AttSpaceTiming.HiZSetupTime=1; //高阻态时间 HAL_NAND_Init(&NAND_Handler,&ComSpaceTiming,&AttSpaceTiming); nand_reset(); //复位NAND // delay_ms(100); wait_for_ready(); NAND_ModeSet(4); //设置为MODE4,高速模式 } //NAND FALSH底层驱动,引脚配置，时钟使能 //此函数会被HAL_NAND_Init()调用 void HAL_NAND_MspInit(NAND_HandleTypeDef *hnand) { GPIO_InitTypeDef GPIO_Initure; __HAL_RCC_FMC_CLK_ENABLE(); //使能FMC时钟 __HAL_RCC_GPIOD_CLK_ENABLE(); //使能GPIOD时钟 __HAL_RCC_GPIOE_CLK_ENABLE(); //使能GPIOE时钟 __HAL_RCC_GPIOG_CLK_ENABLE(); //使能GPIOG时钟 //初始化PD6 R/B引脚 GPIO_Initure.Pin=GPIO_PIN_6; GPIO_Initure.Mode=GPIO_MODE_INPUT; //输入 GPIO_Initure.Pull=GPIO_PULLUP; //上拉 GPIO_Initure.Speed=GPIO_SPEED_HIGH; //高速 HAL_GPIO_Init(GPIOD,&GPIO_Initure); //初始化PG9 NCE3引脚 GPIO_Initure.Pin=GPIO_PIN_9; GPIO_Initure.Mode=GPIO_MODE_AF_PP; //输入 GPIO_Initure.Pull=GPIO_NOPULL; //上拉 GPIO_Initure.Speed=GPIO_SPEED_HIGH; //高速 GPIO_Initure.Alternate=GPIO_AF12_FMC; //复用为FMC HAL_GPIO_Init(GPIOG,&GPIO_Initure); //初始化PD0,1,4,5,11,12,14,15 GPIO_Initure.Pin=GPIO_PIN_0|GPIO_PIN_1|GPIO_PIN_4|GPIO_PIN_5|\ GPIO_PIN_11|GPIO_PIN_12|GPIO_PIN_14|GPIO_PIN_15; GPIO_Initure.Pull=GPIO_NOPULL; HAL_GPIO_Init(GPIOD,&GPIO_Initure); //初始化PE7,8,9,10 GPIO_Initure.Pin=GPIO_PIN_7|GPIO_PIN_8|GPIO_PIN_9|GPIO_PIN_10; HAL_GPIO_Init(GPIOE,&GPIO_Initure); } //读NAND状态 //返回值:NAND状态值 //bit0:0,成功;1,错误(编程/擦除/READ) //bit6:0,Busy;1,Ready static rt_bool_t read_status(rt_uint8_t cmd) { volatile rt_uint8_t value=0; SET_NAND_CMD(NAND_READSTA);//发送读状态命令 value++;value++;value++;value++;value++; //加延时,防止-O2优化,导致的错误. value=*(volatile rt_uint8_t*)NAND_ADDRESS; //读取状态值 switch (cmd) { case NAND_WRITE0: case NAND_ERASE1: if (value & 0x01) /* Erase/Program failure(1) or pass(0) */ return (RT_FALSE); else return (RT_TRUE); case NAND_AREA_TRUE1: /* bit 5 and 6, Read busy(0) or ready(1) */ return (RT_TRUE); default: break; } return (RT_FALSE); } static rt_err_t nand_MT29F4G08_readid(struct rt_mtd_nand_device *device) { rt_uint32_t id; SET_NAND_CMD(NAND_READID); //发送读取ID命令 SET_NAND_ADD(0X00); GET_NAND_DAT(_device.id[0]);//ID一共有5个字节 GET_NAND_DAT(_device.id[1]); GET_NAND_DAT(_device.id[2]); GET_NAND_DAT(_device.id[3]); GET_NAND_DAT(_device.id[4]); //镁光的NAND FLASH的ID一共5个字节，但是为了方便我们只取4个字节组成一个32位的ID值 //根据NAND FLASH的数据手册，只要是镁光的NAND FLASH，那么一个字节ID的第一个字节都是0X2C //所以我们就可以抛弃这个0X2C，只取后面四字节的ID值。 id=((rt_uint32_t)_device.id[1])<<24|((rt_uint32_t)_device.id[2])<<16|((rt_uint32_t)_device.id[3])<<8|_device.id[4]; rt_kprintf("\nNAND ID: 0x%08X\n", id); return RT_EOK; } static rt_err_t nand_datacorrect(uint32_t generatedEcc, uint32_t readEcc, uint8_t *data) { #define ECC_MASK28 0x0FFFFFFF /* 28 valid ECC parity bits. */ #define ECC_MASK 0x05555555 /* 14 ECC parity bits. */ rt_uint32_t count, bitNum, byteAddr; rt_uint32_t mask; rt_uint32_t syndrome; rt_uint32_t eccP; /* 14 even ECC parity bits. */ rt_uint32_t eccPn; /* 14 odd ECC parity bits. */ syndrome = (generatedEcc ^ readEcc) & ECC_MASK28; if (syndrome == 0) return (RT_MTD_EOK); /* No errors in data. */ eccPn = syndrome & ECC_MASK; /* Get 14 odd parity bits. */ eccP = (syndrome >> 1) & ECC_MASK; /* Get 14 even parity bits. */ if ((eccPn ^ eccP) == ECC_MASK) /* 1-bit correctable error ? */ { bitNum = (eccP & 0x01) | ((eccP >> 1) & 0x02) | ((eccP >> 2) & 0x04); NAND_DEBUG("ECC bit %d\n",bitNum); byteAddr = ((eccP >> 6) & 0x001) | ((eccP >> 7) & 0x002) | ((eccP >> 8) & 0x004) | ((eccP >> 9) & 0x008) | ((eccP >> 10) & 0x010) | ((eccP >> 11) & 0x020) | ((eccP >> 12) & 0x040) | ((eccP >> 13) & 0x080) | ((eccP >> 14) & 0x100) | ((eccP >> 15) & 0x200) | ((eccP >> 16) & 0x400) ; data[ byteAddr ] ^= 1 << bitNum; return RT_MTD_EOK; } /* Count number of one's in the syndrome. */ count = 0; mask = 0x00800000; while (mask) { if (syndrome & mask) count++; mask >>= 1; } if (count == 1) /* Error in the ECC itself. */ return RT_MTD_EECC; return -RT_MTD_EECC; /* Unable to correct data. */ #undef ECC_MASK #undef ECC_MASK24 } static rt_err_t nand_MT29F4G08_readpage(struct rt_mtd_nand_device *device, rt_off_t page, rt_uint8_t *data, rt_uint32_t data_len, rt_uint8_t *spare, rt_uint32_t spare_len) { rt_uint32_t index; rt_uint32_t gecc, recc; rt_uint8_t tmp[4]; rt_err_t result; rt_uint32_t i; page = page + device->block_start * device->pages_per_block; if (page/device->pages_per_block > device->block_end) { return -RT_MTD_EIO; } result = RT_MTD_EOK; rt_mutex_take(&_device.lock, RT_WAITING_FOREVER); if (data && data_len) { SET_NAND_CMD(NAND_AREA_A); //发送地址 SET_NAND_ADD((rt_uint8_t)(0&0xFF)); SET_NAND_ADD((rt_uint8_t)(0>>8)); SET_NAND_ADD((rt_uint8_t)(page & 0xFF)); SET_NAND_ADD((rt_uint8_t)(page >> 8)); SET_NAND_ADD((rt_uint8_t)(page >> 16)); SET_NAND_CMD(NAND_AREA_TRUE1); //下面两行代码是等待R/B引脚变为低电平，其实主要起延时作用的，等待NAND操作R/B引脚。因为我们是通过 //将STM32的NWAIT引脚(NAND的R/B引脚)配置为普通IO，代码中通过读取NWAIT引脚的电平来判断NAND是否准备 //就绪的。这个也就是模拟的方法，所以在速度很快的时候有可能NAND还没来得及操作R/B引脚来表示NAND的忙 //闲状态，就读取了R/B引脚,这个时候肯定会出错的，事实上确实是会出错! NAND_WaitRB(0); //等待RB=0 //下面2行代码是真正判断NAND是否准备好的 NAND_WaitRB(1); //等待RB=1 FMC_NAND_ECC_Enable(NAND_Handler.Instance,FMC_NAND_BANK3); for (i = 0; i < data_len; i ++) { GET_NAND_DAT(data[i]); } gecc = FMC_NAND_GetECC(NAND_Handler.Instance,(uint32_t*)&gecc,FMC_NAND_BANK3,10); if (data_len == PAGE_DATA_SIZE) { for (index = 0; index < ECC_SIZE; index ++) { GET_NAND_DAT(tmp[index]); } if (spare && spare_len) { for (i = ECC_SIZE; i < spare_len; i ++) { GET_NAND_DAT(spare[i]); } rt_memcpy(spare, tmp , ECC_SIZE); } recc = (tmp[3] << 24) | (tmp[2] << 16) | (tmp[1] << 8) | tmp[0]; if (recc != 0xFFFFFFFF && gecc != 0) result = nand_datacorrect(gecc, recc, data); if (result != RT_MTD_EOK) NAND_DEBUG("page: %d, gecc %X, recc %X>",page, gecc, recc); goto _exit; } } if (spare && spare_len) { SET_NAND_CMD(NAND_AREA_A); //发送地址 SET_NAND_ADD((rt_uint8_t)(PAGE_DATA_SIZE&0xFF)); SET_NAND_ADD((rt_uint8_t)(PAGE_DATA_SIZE>>8)); SET_NAND_ADD((rt_uint8_t)(page & 0xFF)); SET_NAND_ADD((rt_uint8_t)(page >> 8)); SET_NAND_ADD((rt_uint8_t)(page >> 16)); SET_NAND_CMD(NAND_AREA_TRUE1); //下面两行代码是等待R/B引脚变为低电平，其实主要起延时作用的，等待NAND操作R/B引脚。因为我们是通过 //将STM32的NWAIT引脚(NAND的R/B引脚)配置为普通IO，代码中通过读取NWAIT引脚的电平来判断NAND是否准备 //就绪的。这个也就是模拟的方法，所以在速度很快的时候有可能NAND还没来得及操作R/B引脚来表示NAND的忙 //闲状态，就读取了R/B引脚,这个时候肯定会出错的，事实上确实是会出错! NAND_WaitRB(0); //等待RB=0 //下面2行代码是真正判断NAND是否准备好的 NAND_WaitRB(1); //等待RB=1 for (i = 0; i < spare_len; i ++) { GET_NAND_DAT(spare[i]); } } _exit: rt_mutex_release(&_device.lock); return (result); } static rt_err_t nand_MT29F4G08_writepage(struct rt_mtd_nand_device *device, rt_off_t page, const rt_uint8_t *data, rt_uint32_t data_len, const rt_uint8_t *spare, rt_uint32_t spare_len) { rt_err_t result; rt_uint32_t gecc; rt_uint32_t i; page = page + device->block_start * device->pages_per_block; if (page/device->pages_per_block > device->block_end) { return -RT_MTD_EIO; } result = RT_MTD_EOK; rt_mutex_take(&_device.lock, RT_WAITING_FOREVER); if (data && data_len) { SET_NAND_CMD(NAND_WRITE0); //发送地址 SET_NAND_ADD((rt_uint8_t)(0&0xFF)); SET_NAND_ADD((rt_uint8_t)(0>>8)); SET_NAND_ADD((rt_uint8_t)(page & 0xFF)); SET_NAND_ADD((rt_uint8_t)(page >> 8)); SET_NAND_ADD((rt_uint8_t)(page >> 16)); FMC_NAND_ECC_Enable(NAND_Handler.Instance,FMC_NAND_BANK3); for (i = 0; i < data_len; i ++) { SET_NAND_DAT(data[i]); } gecc = FMC_NAND_GetECC(NAND_Handler.Instance,(uint32_t*)&gecc,FMC_NAND_BANK3,10); FMC_NAND_ECC_Disable(NAND_Handler.Instance,FMC_NAND_BANK3); if (data_len == PAGE_DATA_SIZE) { SET_NAND_DAT((uint8_t)gecc); SET_NAND_DAT((uint8_t)(gecc >> 8)); SET_NAND_DAT((uint8_t)(gecc >> 16)); SET_NAND_DAT((uint8_t)(gecc >> 24)); if (spare && spare_len) { for (i = ECC_SIZE; i < spare_len; i ++) { SET_NAND_DAT(spare[i]); } } } SET_NAND_CMD(NAND_WRITE_TURE1); if(wait_for_ready()!=NSTA_READY) { nand_reset(); result = -RT_MTD_EIO;//失败 } goto _exit; } if (spare && spare_len) { SET_NAND_CMD(NAND_WRITE0); //发送地址 SET_NAND_ADD((rt_uint8_t)(PAGE_DATA_SIZE&0xFF)); SET_NAND_ADD((rt_uint8_t)(PAGE_DATA_SIZE>>8)); SET_NAND_ADD((rt_uint8_t)(page & 0xFF)); SET_NAND_ADD((rt_uint8_t)(page >> 8)); SET_NAND_ADD((rt_uint8_t)(page >> 16)); if (spare && spare_len) for (i = ECC_SIZE; i < spare_len; i ++) { SET_NAND_DAT(spare[i]); } SET_NAND_CMD(NAND_WRITE_TURE1); if(wait_for_ready()!=NSTA_READY) { nand_reset(); result = -RT_MTD_EIO;//失败 } } _exit: rt_mutex_release(&_device.lock); return (result); } static rt_err_t nand_MT29F4G08_eraseblock(struct rt_mtd_nand_device *device, rt_uint32_t block) { unsigned int blockPage; rt_err_t result; /* add the start blocks */ block = block + device->block_start; blockPage = (block << 6); result = RT_MTD_EOK; rt_mutex_take(&_device.lock, RT_WAITING_FOREVER); SET_NAND_CMD(NAND_ERASE0); //发送地址 SET_NAND_ADD((rt_uint8_t)blockPage); SET_NAND_ADD((rt_uint8_t)(blockPage>>8)); SET_NAND_ADD((rt_uint8_t)(blockPage>>16)); SET_NAND_CMD(NAND_ERASE1); if(wait_for_ready()!=NSTA_READY) { nand_reset(); result = -RT_MTD_EIO;//失败 } rt_mutex_release(&_device.lock); return result; } static rt_err_t nand_MT29F4G08_pagecopy(struct rt_mtd_nand_device *device, rt_off_t src_page, rt_off_t dst_page) { rt_err_t result = RT_MTD_EOK; rt_uint32_t source_block=0,dest_block=0; src_page = src_page + device->block_start * device->pages_per_block; dst_page = dst_page + device->block_start * device->pages_per_block; //判断源页和目的页是否在同一个plane中 source_block=src_page/device->pages_per_block; dest_block=dst_page/device->pages_per_block; if((source_block%2)!=(dest_block%2))return RT_MTD_ESRC; //不在同一个plane内 SET_NAND_CMD(NAND_MOVEDATA_CMD0);//发送命令0X00 SET_NAND_ADD((rt_uint8_t)(0&0xFF)); //发送源页地址 SET_NAND_ADD((rt_uint8_t)(0>>8)); SET_NAND_ADD((rt_uint8_t)(src_page & 0xFF)); SET_NAND_ADD((rt_uint8_t)(src_page >> 8)); SET_NAND_ADD((rt_uint8_t)(src_page >> 16)); SET_NAND_CMD(NAND_MOVEDATA_CMD1);//发送命令0X35 //下面两行代码是等待R/B引脚变为低电平，其实主要起延时作用的，等待NAND操作R/B引脚。因为我们是通过 //将STM32的NWAIT引脚(NAND的R/B引脚)配置为普通IO，代码中通过读取NWAIT引脚的电平来判断NAND是否准备 //就绪的。这个也就是模拟的方法，所以在速度很快的时候有可能NAND还没来得及操作R/B引脚来表示NAND的忙 //闲状态，结果我们就读取了R/B引脚,这个时候肯定会出错的，事实上确实是会出错!大家也可以将下面两行 //代码换成延时函数,只不过这里我们为了效率所以没有用延时函数。 result=NAND_WaitRB(0); //等待RB=0 if(result)return -RT_MTD_EIO; //超时退出 //下面2行代码是真正判断NAND是否准备好的 result=NAND_WaitRB(1); //等待RB=1 if(result)return -RT_MTD_EIO; //超时退出 SET_NAND_CMD(NAND_MOVEDATA_CMD2);//发送命令0X85 SET_NAND_ADD((rt_uint8_t)(0&0xFF)); //发送目的页地址 SET_NAND_ADD((rt_uint8_t)(0>>8)); SET_NAND_ADD((rt_uint8_t)(dst_page & 0xFF)); SET_NAND_ADD((rt_uint8_t)(dst_page >> 8)); SET_NAND_ADD((rt_uint8_t)(dst_page >> 16)); SET_NAND_CMD(NAND_MOVEDATA_CMD3);//发送命令0X10 if(wait_for_ready()!=NSTA_READY) { nand_reset(); return -RT_MTD_EIO;//失败 } return RT_MTD_EOK; } static rt_err_t nand_MT29F4G08_checkblock(struct rt_mtd_nand_device* device, rt_uint32_t block) { return (RT_MTD_EOK); } static rt_err_t nand_MT29F4G08_markbad(struct rt_mtd_nand_device* device, rt_uint32_t block) { return (RT_MTD_EOK); } static const struct rt_mtd_nand_driver_ops ops = { nand_MT29F4G08_readid, nand_MT29F4G08_readpage, nand_MT29F4G08_writepage, nand_MT29F4G08_pagecopy, nand_MT29F4G08_eraseblock, nand_MT29F4G08_checkblock, nand_MT29F4G08_markbad, }; static struct rt_mtd_nand_device _partition[1]; int nand_MT29F4G08_hw_init(void) { NAND_Init(); rt_mutex_init(&_device.lock, "nand", RT_IPC_FLAG_FIFO); /* register nand0 */ _partition[0].page_size = PAGE_DATA_SIZE; _partition[0].pages_per_block = PAGES_PER_BLOCK; _partition[0].plane_num = 2; _partition[0].oob_size = PAGE_OOB_SIZE; _partition[0].oob_free = PAGE_OOB_SIZE - ((PAGE_DATA_SIZE) * 3 / 256); _partition[0].block_start = 0; _partition[0].block_end = 4095; _partition[0].block_total = _partition[0].block_end - _partition[0].block_start; _partition[0].ops = &ops; rt_mtd_nand_register_device("nand0", &_partition[0]); nand_MT29F4G08_readid(&_partition[0]); return RT_EOK; } INIT_BOARD_EXPORT(nand_MT29F4G08_hw_init);