[bsp/stm32/stm32h743-atk-apollo]support stm32h7 fal

This commit is contained in:
whj4674672 2020-05-20 13:38:04 +08:00
parent 2cbb9c5388
commit b91f1ab54e
4 changed files with 356 additions and 0 deletions

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/*
* Copyright (c) 2006-2018, RT-Thread Development Team
*
* SPDX-License-Identifier: Apache-2.0
*
* Change Logs:
* Date Author Notes
* 2018-12-5 SummerGift first version
* 2019-3-2 jinsheng add Macro judgment
* 2020-1-6 duminmin support single bank mode
* 2020-5-17 yufanyufan77 support support H7
*/
#include "board.h"
#ifdef BSP_USING_ON_CHIP_FLASH
#include "drv_config.h"
#include "drv_flash.h"
#if defined(PKG_USING_FAL)
#include "fal.h"
#endif
//#define DRV_DEBUG
#define LOG_TAG "drv.flash"
#include <drv_log.h>
#define ADDR_FLASH_SECTOR_0 ((rt_uint32_t)0x08000000) /* Base address of Sector 0, 128 Kbytes */
#define ADDR_FLASH_SECTOR_1 ((rt_uint32_t)0x08020000) /* Base address of Sector 1, 128 Kbytes */
#define ADDR_FLASH_SECTOR_2 ((rt_uint32_t)0x08040000) /* Base address of Sector 2, 128 Kbytes */
#define ADDR_FLASH_SECTOR_3 ((rt_uint32_t)0x08060000) /* Base address of Sector 3, 128 Kbytes */
#define ADDR_FLASH_SECTOR_4 ((rt_uint32_t)0x08080000) /* Base address of Sector 4, 128 Kbytes */
#define ADDR_FLASH_SECTOR_5 ((rt_uint32_t)0x080A0000) /* Base address of Sector 5, 128 Kbytes */
#define ADDR_FLASH_SECTOR_6 ((rt_uint32_t)0x080C0000) /* Base address of Sector 6, 128 Kbytes */
#define ADDR_FLASH_SECTOR_7 ((rt_uint32_t)0x080E0000) /* Base address of Sector 7, 128 Kbytes */
#define ADDR_FLASH_SECTOR_8 ((rt_uint32_t)0x08100000) /* Base address of Sector 8, 128 Kbytes */
#define FLASH_SECTOR_0 0U /* Sector Number 0 */
#define FLASH_SECTOR_1 1U /* Sector Number 1 */
#define FLASH_SECTOR_2 2U /* Sector Number 2 */
#define FLASH_SECTOR_3 3U /* Sector Number 3 */
#define FLASH_SECTOR_4 4U /* Sector Number 4 */
#define FLASH_SECTOR_5 5U /* Sector Number 5 */
#define FLASH_SECTOR_6 6U /* Sector Number 6 */
#define FLASH_SECTOR_7 7U /* Sector Number 7 */
/**
* @brief Gets the sector of a given address
* @param addr flash address
* @param flash bank
* @param flash sector
* @retval The sector of a given address
*/
static void GetSector(rt_uint32_t Address,uint32_t* bank,uint32_t* sector)
{
#if defined (FLASH_OPTCR_nDBANK)
FLASH_OBProgramInitTypeDef OBInit;
uint32_t nbank = 0;
//get duel bank ability:nDBANK(Bit29)
HAL_FLASHEx_OBGetConfig(&OBInit);
nbank = ((OBInit.USERConfig & 0x20000000U) >> 29);
//1:single bank mode
if (1 == nbank)
{
if ((Address < ADDR_FLASH_SECTOR_1) && (Address >= ADDR_FLASH_SECTOR_0))
{
sector = FLASH_SECTOR_0;
}
else if ((Address < ADDR_FLASH_SECTOR_2) && (Address >= ADDR_FLASH_SECTOR_1))
{
sector = FLASH_SECTOR_1;
}
else if ((Address < ADDR_FLASH_SECTOR_3) && (Address >= ADDR_FLASH_SECTOR_2))
{
sector = FLASH_SECTOR_2;
}
else if ((Address < ADDR_FLASH_SECTOR_4) && (Address >= ADDR_FLASH_SECTOR_3))
{
sector = FLASH_SECTOR_3;
}
else if ((Address < ADDR_FLASH_SECTOR_5) && (Address >= ADDR_FLASH_SECTOR_4))
{
sector = FLASH_SECTOR_4;
}
else if ((Address < ADDR_FLASH_SECTOR_6) && (Address >= ADDR_FLASH_SECTOR_5))
{
sector = FLASH_SECTOR_5;
}
else if ((Address < ADDR_FLASH_SECTOR_7) && (Address >= ADDR_FLASH_SECTOR_6))
{
sector = FLASH_SECTOR_6;
}
else if ((Address < ADDR_FLASH_SECTOR_8) && (Address >= ADDR_FLASH_SECTOR_7))
{
sector = FLASH_SECTOR_7;
}
else if ((Address < ADDR_FLASH_SECTOR_9) && (Address >= ADDR_FLASH_SECTOR_8))
{
sector = FLASH_SECTOR_8;
}
else if ((Address < ADDR_FLASH_SECTOR_10) && (Address >= ADDR_FLASH_SECTOR_9))
{
sector = FLASH_SECTOR_9;
}
else if ((Address < ADDR_FLASH_SECTOR_11) && (Address >= ADDR_FLASH_SECTOR_10))
{
sector = FLASH_SECTOR_10;
}
else
{
sector = FLASH_SECTOR_11;
}
}
else //0:dual bank mode
{
LOG_E("rtthread doesn't support duel bank mode yet!");
RT_ASSERT(0);
}
#else //no dual bank ability
*sector = (Address&0xffffff)/FLASH_SIZE_GRANULARITY_128K;
if(*sector>7)
{
*bank = FLASH_BANK_1;
*sector = *sector/2;
}
else
*bank = FLASH_BANK_2;
#endif
}
/**
* Read data from flash.
* @note This operation's units is word.
*
* @param addr flash address
* @param buf buffer to store read data
* @param size read bytes size
*
* @return result
*/
int stm32_flash_read(rt_uint32_t addr, rt_uint8_t *buf, size_t size)
{
size_t i;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("read outrange flash size! addr is (0x%p)", (void *)(addr + size));
return -1;
}
for (i = 0; i < size; i++, buf++, addr++)
{
*buf = *(rt_uint8_t *) addr;
}
return size;
}
/**
* Write data to flash.
* @note This operation's units is word.
* @note This operation must after erase. @see flash_erase.
*
* @param addr flash address
* @param buf the write data buffer
* @param size write bytes size
*
* @return result
*/
int stm32_flash_write(rt_uint32_t addr, const rt_uint8_t *buf, size_t size)
{
rt_err_t result = RT_EOK;
rt_uint32_t end_addr = addr + size;
rt_uint32_t bank = addr/ADDR_FLASH_SECTOR_8;;
if ((end_addr) > STM32_FLASH_END_ADDRESS)
{
LOG_E("write outrange flash size! addr is (0x%p)", (void *)(addr + size));
return -RT_EINVAL;
}
if (size < 1)
{
return -RT_EINVAL;
}
/* Unlock the Flash to enable the flash control register access */
HAL_FLASH_Unlock();
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR );
for (size_t i = 0; i < size/32; i++, addr+=32, buf+=32)
{
/* write data to flash */
if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_FLASHWORD, addr, (uint64_t)((uint32_t)buf)) == HAL_OK)
{
if (*(rt_uint8_t *)addr != *buf)
{
result = -RT_ERROR;
break;
}
}
else
{
result = -RT_ERROR;
break;
}
}
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
return size;
}
/**
* Erase data on flash.
* @note This operation is irreversible.
* @note This operation's units is different which on many chips.
*
* @param addr flash address
* @param size erase bytes size
*
* @return result
*/
int stm32_flash_erase(rt_uint32_t addr, size_t size)
{
rt_err_t result = RT_EOK;
rt_uint32_t FirstSector = 0, NbOfSectors = 0;
rt_uint32_t SECTORError = 0;
rt_uint32_t bank = 0;
if ((addr + size) > STM32_FLASH_END_ADDRESS)
{
LOG_E("ERROR: erase outrange flash size! addr is (0x%p)\n", (void *)(addr + size));
return -RT_EINVAL;
}
/*Variable used for Erase procedure*/
FLASH_EraseInitTypeDef EraseInitStruct;
/* Unlock the Flash to enable the flash control register access */
HAL_FLASH_Unlock();
/* Get the 1st sector to erase */
GetSector(addr,&bank,&FirstSector);
/* Get the number of sector to erase from 1st sector*/
GetSector(addr + size,0,&NbOfSectors);
NbOfSectors = NbOfSectors - FirstSector + 1;
/* Fill EraseInit structure*/
EraseInitStruct.TypeErase = FLASH_TYPEERASE_SECTORS;
EraseInitStruct.VoltageRange = FLASH_VOLTAGE_RANGE_3;
EraseInitStruct.Sector = FirstSector;
EraseInitStruct.NbSectors = NbOfSectors;
EraseInitStruct.Banks = bank;
if (HAL_FLASHEx_Erase(&EraseInitStruct, &SECTORError) != HAL_OK)
{
result = -RT_ERROR;
goto __exit;
}
__exit:
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
LOG_D("erase done: addr (0x%p), size %d", (void *)addr, size);
return size;
}
#if defined(PKG_USING_FAL)
static int fal_flash_read_128k(long offset, rt_uint8_t *buf, size_t size);
static int fal_flash_write_128k(long offset, const rt_uint8_t *buf, size_t size);
static int fal_flash_erase_128k(long offset, size_t size);
const struct fal_flash_dev stm32_onchip_flash_128k = { "onchip_flash_128k", STM32_FLASH_START_ADRESS, FLASH_SIZE_GRANULARITY_128K, (128 * 1024), {NULL, fal_flash_read_128k, fal_flash_write_128k, fal_flash_erase_128k} };
static int fal_flash_read_128k(long offset, rt_uint8_t *buf, size_t size)
{
return stm32_flash_read(stm32_onchip_flash_128k.addr + offset, buf, size);
}
static int fal_flash_write_128k(long offset, const rt_uint8_t *buf, size_t size)
{
return stm32_flash_write(stm32_onchip_flash_128k.addr + offset, buf, size);
}
static int fal_flash_erase_128k(long offset, size_t size)
{
return stm32_flash_erase(stm32_onchip_flash_128k.addr + offset, size);
}
#endif
#endif /* BSP_USING_ON_CHIP_FLASH */

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| USB Device | 暂不支持 | |
| USB Host | 暂不支持 | |
| IWG | 支持 | |
| FLASH | 支持 | 已适配 [FAL](https://github.com/RT-Thread-packages/fal) |
## 使用说明
@ -118,6 +119,7 @@ msh >
## 注意事项
1. 使用UART2 DMA模式时HEAP的CACHE策略设置了WT模式所以在使用rt_device_read读取数据之前必须调用用SCB_InvalidateDCache_by_Addr或者SCB_InvalidateDCache已确保读取到数据的正确性。
2. 使用FAL操作片内FLASH每次读写必须是32字节的整数倍。
## 联系人信息

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@ -110,6 +110,10 @@ menu "On-chip Peripheral Drivers"
default 117
endif
config BSP_USING_ON_CHIP_FLASH
bool "Enable on-chip FLASH"
default n
menuconfig BSP_USING_ONCHIP_RTC
bool "Enable RTC"
select RT_USING_RTC

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/*
* Copyright (c) 2006-2018, RT-Thread Development Team
*
* SPDX-License-Identifier: Apache-2.0
*
* Change Logs:
* Date Author Notes
* 2018-12-5 SummerGift first version
* 2020-5-17 yufanyufan77 support H7
*/
#ifndef _FAL_CFG_H_
#define _FAL_CFG_H_
#include <rtthread.h>
#include <board.h>
#define FLASH_SIZE_GRANULARITY_128K (16 * 128 * 1024)
#define STM32_FLASH_START_ADRESS_128K (0x8000000)
extern const struct fal_flash_dev stm32_onchip_flash_128k;
/* flash device table */
#define FAL_FLASH_DEV_TABLE \
{ \
&stm32_onchip_flash_128k, \
}
/* ====================== Partition Configuration ========================== */
#ifdef FAL_PART_HAS_TABLE_CFG
/* partition table */
#define FAL_PART_TABLE \
{ \
{FAL_PART_MAGIC_WROD, "app", "onchip_flash_128k", 0 , 8*128*1024, 0}, \
{FAL_PART_MAGIC_WROD, "param", "onchip_flash_128k", 8*128*1024 , 128*1024, 0}, \
{FAL_PART_MAGIC_WROD, "factory", "onchip_flash_128k", 9*128*1024 , 7*128*1024, 0}, \
}
#endif /* FAL_PART_HAS_TABLE_CFG */
#endif /* _FAL_CFG_H_ */