346 lines
8.3 KiB
C
346 lines
8.3 KiB
C
#include "flash.h"
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#include "eeprom.h"
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#include <string.h>
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/******************************************************************************
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* Global variables
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******************************************************************************/
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/******************************************************************************
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* Constants and macros
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******************************************************************************/
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/******************************************************************************
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* Local types
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******************************************************************************/
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/******************************************************************************
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* Local function prototypes
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******************************************************************************/
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/******************************************************************************
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* Local variables
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******************************************************************************/
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/******************************************************************************
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* Local functions
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******************************************************************************/
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/******************************************************************************
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*
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* EEPROM 擦除命令，擦掉eeprom
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*输入参数：地址，函数将会擦除adr所在的512bytes eeprom
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*
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******************************************************************************/
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uint16_t Adress_Js(uint32_t adr)
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{
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uint16_t err = EEPROM_ERR_SUCCESS;
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if(adr & 0x03)
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{
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err = EEPROM_ERR_INVALID_PARAM;
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return (err);
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}
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if(adr >1024)
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{
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err=EEPROM_ADR_OverFlow;
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return(err);
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}
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return(err);
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}
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/******************************************************************************
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*
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* EEPROM 擦除命令，擦掉eeprom
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*输入参数：地址，函数将会擦除adr所在的512bytes eeprom
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*
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******************************************************************************/
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uint16_t EEPROM_Erase(uint32_t adr)
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{
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uint16_t err = EEPROM_ERR_SUCCESS;
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uint32_t e_adr;
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if(adr & 0x03)
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{
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err = EEPROM_ERR_INVALID_PARAM;
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return (err);
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}
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if(adr >1024)
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{
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err=EEPROM_ADR_OverFlow;
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return(err);
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}
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e_adr=adr+EEPROM_START_ADR;
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err = Flash_EraseSector(e_adr);
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return(err);
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}
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/******************************************************************************
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*
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* EEPROM 读取函数，读取地址所在的eeprom
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*输入参数：地址
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*
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******************************************************************************/
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uint32_t EEPROM_Read(uint32_t adr)
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{
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uint16_t err = EEPROM_ERR_SUCCESS;
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uint32_t e_adr;
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uint32_t data;
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if(adr & 0x03)
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{
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err = EEPROM_ERR_INVALID_PARAM;
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return (err);
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}
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if(adr >1024)
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{
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err=EEPROM_ADR_OverFlow;
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return(err);
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}
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e_adr=adr+EEPROM_START_ADR;
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data = M32(e_adr);
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return(data);
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}
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/******************************************************************************
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*
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* EEPROM 写函数，写地址所在的eeprom
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*写之前读取出来，判断eeprom是否为空，如果为空，则直接写
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*如果非空，则先把整个512bytes sector读取到sram，修改要写的位置
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*然后再写入到flash，模拟一个eeprom的写过程
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*输入参数：地址
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*
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******************************************************************************/
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uint16_t EEPROM_Write(uint32_t adr, uint32_t Data)
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{
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uint32_t err = EEPROM_ERR_SUCCESS;
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uint32_t e_adr;
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uint32_t r_data;
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uint16_t i;
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uint32_t start_adr;
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// uint32_t modify_adr;
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uint32_t EEPROM_DATA[128];
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if(adr & 0x03)
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{
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err = EEPROM_ERR_INVALID_PARAM;
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return (err);
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}
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if(adr >1024)
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{
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err=EEPROM_ADR_OverFlow;
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return(err);
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}
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r_data = EEPROM_Read(adr);
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e_adr=adr+EEPROM_START_ADR;
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if(r_data== EEPROM_BLANK) //如果要写的位置是空的，则直接写
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{
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err= Flash_Program1LongWord(e_adr,Data);
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}
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else if((r_data&Data) == Data)//如果要写的位置对应的bit，和要写的数据一致，或者是1，也是可以直接写
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{
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err= Flash_Program1LongWord(e_adr,Data);
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}
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else if(r_data == Data) //如果要写的数据和现有的数据一致，就不进行任何操作，直接返回
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{
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return(err);
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}
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else
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{
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start_adr = e_adr & EEPROM_SECTOR_MASK; //计算出sector的头地址
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for( i=0;i<128;i++ ) //如果要写的位置不为空，则先把flash内容读取出来，放在sram中，修改
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{
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EEPROM_DATA[i] = M32(start_adr + 4*i);
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}
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EEPROM_DATA[(adr&EEPROM_ARRAY_ADR_MASK)>>2] = Data; //修改SRAM 中的数据
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err=EEPROM_Erase(adr);
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err=Flash_Program(start_adr,(uint8_t*)EEPROM_DATA,512);//然后写入flash
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}
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return(err);
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}
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/******************************************************************************
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*
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*Byte 写函数
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*
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******************************************************************************/
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uint16_t EEPROM_WriteByte(uint32_t adr, uint8_t Data)
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{
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uint32_t err = EEPROM_ERR_SUCCESS;
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uint32_t data_mask;
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uint32_t r_data;
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uint32_t data_m0;
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uint32_t data_m1;
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uint32_t word_adr = adr &0x3fc;
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uint32_t b_sit= adr & 0x3;
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//先让高位为FF
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data_m0 = Data << b_sit*8;
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data_mask = 0xFFFFFFFF<<(b_sit+1)*8;
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// printf("datam0:=0x%x \n",data_m0);
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//然后让低位为FF
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data_m1 = 0xFFFFFFFF >> (32-b_sit*8);
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data_m1 = data_m1 | data_m0 | data_mask ;
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// printf("datam1:=0x%x \n",data_m1);
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r_data = EEPROM_Read(word_adr);
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// printf("r_data:=0x%x \n",r_data);
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//或上原来的数据
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data_m1 = data_m1 & r_data;
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// printf("data_m1:=0x%x \n",data_m1); ;
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err = EEPROM_Write(word_adr , data_m1);
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return(err);
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}
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/******************************************************************************
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*
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*Byte 读函数
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*
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******************************************************************************/
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uint8_t EEPROM_ReadByte(uint32_t adr)
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{
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uint32_t r_data;
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uint32_t word_adr = adr &0x3fc;
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uint32_t b_sit= adr & 0x3;
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uint8_t data;
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r_data = EEPROM_Read(word_adr);
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data = (r_data>>b_sit*8)& 0xff;
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return(data);
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}
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/******************************************************************************
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*
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*写函数，写一个长度为bytesize，到eeprom
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*先把1k的eeprom读取放入sram，然后修改要写的位置，
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*这个函数是还可以再优化的
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*这样更改后，没有考虑2K eeprom 。超过2K 也是完全可以的。
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******************************************************************************/
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uint16_t EERPOM_Writeup4byte(uint32_t adr,uint8_t *pData,uint32_t length)
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{
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uint8_t buf[512];
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uint8_t *pbuf;
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uint32_t e_adr;
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uint32_t e_sec;
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uint32_t e_offset;
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uint32_t a;
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uint32_t err = EEPROM_ERR_SUCCESS;
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#ifdef IAR
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if(adr & 0x03)
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{
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err = EEPROM_ERR_INVALID_PARAM;
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return (err);
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}
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#endif
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if((adr + length )>1024)
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{
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err=EEPROM_ADR_OverFlow;
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return(err);
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}
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e_adr=adr+EEPROM_START_ADR;
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e_sec=e_adr & EEPROM_SECTOR_MASK;
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e_offset=e_adr & 0x1ff;
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while (length>0){
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//如果起始地址不等于0，或者长度小于512 都进入这个循环
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if (e_offset||(length<512)){
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pbuf=buf;
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a=512-e_offset;
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a=(length>a?a:length);
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memcpy(buf,(uint8_t*)e_sec,512);
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memcpy(&buf[e_offset],pData,a);
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pData+=a;
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length-=a;
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e_offset=0;
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}else{ //如果起始地址等于0且长度大于512 则简单了
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pbuf=pData;
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pData+=512;
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length-=512;
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}
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err=Flash_EraseSector(e_sec);
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err=Flash_Program(e_sec,(uint8_t*)pbuf,512);//然后写入flash
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e_sec+=0x200;
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}
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return err;
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}
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/*
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uint16_t EERPOM_Writeup4byte(uint32_t adr,uint8_t *pData,uint32_t bytesize)
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{
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uint32_t err = EEPROM_ERR_SUCCESS;
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uint32_t e_adr;
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uint16_t i;
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uint32_t start_adr;
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uint32_t EEPROM_DATA[256];
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uint32_t longword = bytesize >>2;
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uint32_t *pwData = (uint32_t*)pData ;
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err=Adress_Js(adr);
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if(adr+bytesize >1024) //如果写入的地址,加上要写的数据的个数大于1024，则报错
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{
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err = EEPROM_ADR_OverFlow;
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return(err);
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}
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e_adr=adr+EEPROM_START_ADR;
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start_adr = e_adr & EEPROM_SECTOR_MASK; //计算出sector 头地址
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for( i=0;i<256;i++ ) //先把数据读取到sram
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{
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EEPROM_DATA[i] = M32(start_adr + 4*i);
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}
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for( i=0 ;i<longword ;i++) //然后修改要写的地址
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{
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EEPROM_DATA[(adr>>2)+i] = *pwData++;
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}
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//先erase掉2个eeprom secoter
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err=EEPROM_Erase(0x000);
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err=EEPROM_Erase(0x200);
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err=Flash_Program(start_adr,(uint8_t*)EEPROM_DATA,1024);//然后写入flash
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return(err);
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}
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*/
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