/*
* Copyright (c) 2006-2023, RT-Thread Development Team
*
* SPDX-License-Identifier: Apache-2.0
*
* Change Logs:
* Date Author Notes
* 2018-12-5 SummerGift first version
* 2019-3-2 jinsheng add Macro judgment
* 2020-1-6 duminmin support single bank mode
* 2020-5-17 yufanyufan77 support support H7
* 2021-3-3 zhuyf233 fix some bugs
*/
#include <rtconfig.h>
#include <rtdef.h>
#ifdef BSP_USING_ON_CHIP_FLASH
#include "drv_config.h"
#include "drv_flash.h"
#include <board.h>
#if defined(RT_USING_FAL)
#include "fal.h"
#endif
//#define DRV_DEBUG
#define LOG_TAG "drv.flash"
#include <drv_log.h>
/**
* Read data from flash.
* @note This operation's units is word.
*
* @param addr flash address
* @param buf buffer to store read data
* @param size read bytes size
*
* @retval The length of bytes that have been read
*/
int stm32_flash_read(rt_uint32_t addr, rt_uint8_t *buf, size_t size)
{
size_t i;
if ((addr + size - 1) > FLASH_END)
{
LOG_E("read outrange flash size! addr is (0x%p)", (void *)(addr + size));
return -RT_ERROR;
}
for (i = 0; i < size; i++, buf++, addr++)
{
*buf = *(rt_uint8_t *) addr;
}
return size;
}
/**
* Write data to flash.
* @note This operation's units is word.
* @note This operation must after erase. @see flash_erase.
*
* @param addr flash address
* @param buf the write data buffer
* @param size write bytes size
*
* @return The length of bytes that have been written
*/
int stm32_flash_write(rt_uint32_t addr, const rt_uint8_t *buf, size_t size)
{
rt_err_t result = RT_EOK;
rt_uint32_t end_addr = addr + size - 1, write_addr;
rt_uint32_t write_granularity = FLASH_NB_32BITWORD_IN_FLASHWORD * 4;
rt_uint32_t write_size = write_granularity;
rt_uint8_t write_buffer[32] = {0};
if ((end_addr) > FLASH_END)
{
LOG_E("write outrange flash size! addr is (0x%p)", (void *)(addr + size));
return -RT_EINVAL;
}
if(addr % 32 != 0)
{
LOG_E("write addr must be 32-byte alignment");
return -RT_EINVAL;
}
if (size < 1)
{
return -RT_EINVAL;
}
HAL_FLASH_Unlock();
write_addr = (uint32_t)buf;
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR);
while (addr < end_addr)
{
if(end_addr - addr + 1 < write_granularity)
{
write_size = end_addr - addr + 1;
for(size_t i = 0; i < write_size; i++)
{
write_buffer[i] = *((uint8_t *)(write_addr + i));
}
write_addr = (uint32_t)((rt_uint32_t *)write_buffer);
}
if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_FLASHWORD, addr, write_addr) == HAL_OK)
{
for(rt_uint8_t i = 0; i < write_size; i++)
{
if (*(rt_uint8_t *)(addr + i) != *(rt_uint8_t *)(write_addr + i))
{
result = -RT_ERROR;
goto __exit;
}
}
addr += write_granularity;
write_addr += write_granularity;
}
else
{
result = -RT_ERROR;
goto __exit;
}
}
__exit:
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
return size;
}
/**
* Erase data on flash.
* @note This operation is irreversible.
* @note This operation's units is different which on many chips.
*
* @param addr flash address
* @param size erase bytes size
*
* @return result
*/
int stm32_flash_erase(rt_uint32_t addr, size_t size)
{
rt_err_t result = RT_EOK;
rt_uint32_t SECTORError = 0;
if ((addr + size - 1) > FLASH_END)
{
LOG_E("ERROR: erase outrange flash size! addr is (0x%p)\n", (void *)(addr + size));
return -RT_EINVAL;
}
rt_uint32_t addr_bank1 = 0;
rt_uint32_t size_bank1 = 0;
#ifdef FLASH_BANK_2
rt_uint32_t addr_bank2 = 0;
rt_uint32_t size_bank2 = 0;
#endif
if((addr + size) < FLASH_BANK2_BASE)
{
addr_bank1 = addr;
size_bank1 = size;
#ifdef FLASH_BANK_2
size_bank2 = 0;
#endif
}
else if(addr >= FLASH_BANK2_BASE)
{
size_bank1 = 0;
#ifdef FLASH_BANK_2
addr_bank2 = addr;
size_bank2 = size;
#endif
}
else
{
addr_bank1 = addr;
size_bank1 = FLASH_BANK2_BASE - addr_bank1;
#ifdef FLASH_BANK_2
addr_bank2 = FLASH_BANK2_BASE;
size_bank2 = addr + size - FLASH_BANK2_BASE;
#endif
}
/*Variable used for Erase procedure*/
FLASH_EraseInitTypeDef EraseInitStruct;
/* Unlock the Flash to enable the flash control register access */
HAL_FLASH_Unlock();
EraseInitStruct.TypeErase = FLASH_TYPEERASE_SECTORS;
EraseInitStruct.VoltageRange = FLASH_VOLTAGE_RANGE_3;
SCB_DisableDCache();
if(size_bank1)
{
EraseInitStruct.Sector = (addr_bank1 - FLASH_BANK1_BASE) / FLASH_SECTOR_SIZE;
EraseInitStruct.NbSectors = (addr_bank1 + size_bank1 -1 - FLASH_BANK1_BASE) / FLASH_SECTOR_SIZE - EraseInitStruct.Sector + 1;
EraseInitStruct.Banks = FLASH_BANK_1;
if (HAL_FLASHEx_Erase(&EraseInitStruct, &SECTORError) != HAL_OK)
{
result = -RT_ERROR;
goto __exit;
}
}
#ifdef FLASH_BANK_2
if(size_bank2)
{
EraseInitStruct.Sector = (addr_bank2 - FLASH_BANK2_BASE) / FLASH_SECTOR_SIZE;
EraseInitStruct.NbSectors = (addr_bank2 + size_bank2 -1 - FLASH_BANK2_BASE) / FLASH_SECTOR_SIZE - EraseInitStruct.Sector + 1;
EraseInitStruct.Banks = FLASH_BANK_2;
if (HAL_FLASHEx_Erase(&EraseInitStruct, &SECTORError) != HAL_OK)
{
result = -RT_ERROR;
goto __exit;
}
}
#endif
__exit:
SCB_EnableDCache();
HAL_FLASH_Lock();
if (result != RT_EOK)
{
return result;
}
LOG_D("erase done: addr (0x%p), size %d", (void *)addr, size);
return size;
}
#if defined(RT_USING_FAL)
static int fal_flash_read_128k(long offset, rt_uint8_t *buf, size_t size);
static int fal_flash_write_128k(long offset, const rt_uint8_t *buf, size_t size);
static int fal_flash_erase_128k(long offset, size_t size);
const struct fal_flash_dev stm32_onchip_flash_128k = { "onchip_flash_128k", STM32_FLASH_START_ADRESS, FLASH_SIZE_GRANULARITY_128K, (128 * 1024), {NULL, fal_flash_read_128k, fal_flash_write_128k, fal_flash_erase_128k} };
static int fal_flash_read_128k(long offset, rt_uint8_t *buf, size_t size)
{
return stm32_flash_read(stm32_onchip_flash_128k.addr + offset, buf, size);
}
static int fal_flash_write_128k(long offset, const rt_uint8_t *buf, size_t size)
{
return stm32_flash_write(stm32_onchip_flash_128k.addr + offset, buf, size);
}
static int fal_flash_erase_128k(long offset, size_t size)
{
return stm32_flash_erase(stm32_onchip_flash_128k.addr + offset, size);
}
#endif
#endif /* BSP_USING_ON_CHIP_FLASH */