134 lines
5.1 KiB
C
134 lines
5.1 KiB
C
/* Define to prevent recursive inclusion -------------------------------------*/
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#ifndef __DRV_NAND_H
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#define __DRV_NAND_H
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#ifdef __cplusplus
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extern "C" {
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#endif
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/* Includes ------------------------------------------------------------------*/
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#include <rtthread.h>
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#include <board.h>
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#include "stm32f4xx.h"
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#include <rtdevice.h>
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//********************************************************************************
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//升级说明
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//V1.1 20160520
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//1,新增硬件ECC支持(仅在以NAND_ECC_SECTOR_SIZE大小为单位进行读写时处理)
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//2,新增NAND_Delay函数,用于等待tADL/tWHR
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//3,新增NAND_WritePageConst函数,用于搜寻坏块.
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//V1.2 20160525
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//1,去掉NAND_SEC_SIZE宏定义，由NAND_ECC_SECTOR_SIZE替代
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//2,去掉nand_dev结构体里面的secbuf指针，用不到
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//////////////////////////////////////////////////////////////////////////////////
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#define NAND_MAX_PAGE_SIZE 4096 //定义NAND FLASH的最大的PAGE大小（不包括SPARE区），默认4096字节
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#define NAND_ECC_SECTOR_SIZE 512 //执行ECC计算的单元大小，默认512字节
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//NAND属性结构体
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typedef struct
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{
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uint16_t page_totalsize; //每页总大小，main区和spare区总和
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uint16_t page_mainsize; //每页的main区大小
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uint16_t page_sparesize; //每页的spare区大小
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uint8_t block_pagenum; //每个块包含的页数量
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uint16_t plane_blocknum; //每个plane包含的块数量
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uint16_t block_totalnum; //总的块数量
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uint16_t good_blocknum; //好块数量
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uint16_t valid_blocknum; //有效块数量(供文件系统使用的好块数量)
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uint32_t id; //NAND FLASH ID
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uint16_t *lut; //LUT表，用作逻辑块-物理块转换
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uint32_t ecc_hard; //硬件计算出来的ECC值
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uint32_t ecc_hdbuf[NAND_MAX_PAGE_SIZE/NAND_ECC_SECTOR_SIZE];//ECC硬件计算值缓冲区
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uint32_t ecc_rdbuf[NAND_MAX_PAGE_SIZE/NAND_ECC_SECTOR_SIZE];//ECC读取的值缓冲区
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}nand_attriute;
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extern nand_attriute nand_dev; //nand重要参数结构体
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//位带操作,实现51类似的GPIO控制功能
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//具体实现思想,参考<<CM3权威指南>>第五章(87页~92页).M4同M3类似,只是寄存器地址变了.
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//IO口操作宏定义
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#define GPIOD_IDR_Addr (GPIOD_BASE+16) //0x40020C10
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#define BITBAND(addr, bitnum) ((addr & 0xF0000000)+0x2000000+((addr &0xFFFFF)<<5)+(bitnum<<2))
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#define MEM_ADDR(addr) *((volatile unsigned long *)(addr))
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#define BIT_ADDR(addr, bitnum) MEM_ADDR(BITBAND(addr, bitnum))
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#define PDin(n) BIT_ADDR(GPIOD_IDR_Addr,n) //输入
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#define NAND_RB PDin(6) //NAND Flash的闲/忙引脚
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#define NAND_ADDRESS ((rt_uint32_t)0x80000000) //nand flash的访问地址,接NCE3,地址为:0X8000 0000
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#define NAND_CMD (uint32_t)(0x010000) //发送命令
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#define NAND_ADDR (uint32_t)(0x020000) //发送地址
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//*((volatile rt_uint8_t *) 0X80000000)
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//*((volatile rt_uint8_t *) 0X80010000)
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//*((volatile rt_uint8_t *) 0X80020000)
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//NAND FLASH命令
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#define NAND_READID 0X90 //读ID指令
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#define NAND_FEATURE 0XEF //设置特性指令
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#define NAND_RESET 0XFF //复位NAND
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#define NAND_READSTA 0X70 //读状态
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#define NAND_AREA_A 0X00
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#define NAND_AREA_TRUE1 0X30
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#define NAND_WRITE0 0X80
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#define NAND_WRITE_TURE1 0X10
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#define NAND_ERASE0 0X60
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#define NAND_ERASE1 0XD0
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#define NAND_MOVEDATA_CMD0 0X00
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#define NAND_MOVEDATA_CMD1 0X35
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#define NAND_MOVEDATA_CMD2 0X85
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#define NAND_MOVEDATA_CMD3 0X10
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//NAND FLASH状态
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#define NSTA_READY 0X40 //nand已经准备好
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#define NSTA_ERROR 0X01 //nand错误
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#define NSTA_TIMEOUT 0X02 //超时
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#define NSTA_ECC1BITERR 0X03 //ECC 1bit错误
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#define NSTA_ECC2BITERR 0X04 //ECC 2bit以上错误
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//NAND FLASH型号和对应的ID号
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#define MT29F4G08ABADA 0XDC909556 //MT29F4G08ABADA
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#define MT29F16G08ABABA 0X48002689 //MT29F16G08ABABA
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struct stm32f4_nand
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{
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rt_uint8_t id[5];
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struct rt_mutex lock;
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struct rt_completion comp;
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};
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void NAND_Init(void);
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uint8_t NAND_ModeSet(uint8_t mode);
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uint32_t NAND_ReadID(void);
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uint8_t NAND_ReadStatus(void);
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uint8_t NAND_WaitForReady(void);
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//static rt_uint8_t nand_reset(void);
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uint8_t NAND_WaitRB(__IO uint8_t rb);
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void NAND_Delay(volatile rt_uint32_t i);
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uint8_t NAND_ReadPage(uint32_t PageNum,uint16_t ColNum,uint8_t *pBuffer,uint16_t NumByteToRead);
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uint8_t NAND_ReadPageComp(uint32_t PageNum,uint16_t ColNum,uint32_t CmpVal,uint16_t NumByteToRead,uint16_t *NumByteEqual);
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uint8_t NAND_WritePage(uint32_t PageNum,uint16_t ColNum,uint8_t *pBuffer,uint16_t NumByteToWrite);
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uint8_t NAND_WritePageConst(uint32_t PageNum,uint16_t ColNum,uint32_t cval,uint16_t NumByteToWrite);
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uint8_t NAND_CopyPageWithoutWrite(uint32_t Source_PageNum,uint32_t Dest_PageNum);
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uint8_t NAND_CopyPageWithWrite(uint32_t Source_PageNum,uint32_t Dest_PageNum,uint16_t ColNum,uint8_t *pBuffer,uint16_t NumByteToWrite);
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uint8_t NAND_ReadSpare(uint32_t PageNum,uint16_t ColNum,uint8_t *pBuffer,uint16_t NumByteToRead);
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uint8_t NAND_WriteSpare(uint32_t PageNum,uint16_t ColNum,uint8_t *pBuffer,uint16_t NumByteToRead);
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uint8_t NAND_EraseBlock(uint32_t BlockNum);
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void NAND_EraseChip(void);
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uint16_t NAND_ECC_Get_OE(uint8_t oe,uint32_t eccval);
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uint8_t NAND_ECC_Correction(uint8_t* data_buf,uint32_t eccrd,uint32_t ecccl);
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int nand_hy27uf_hw_init(void);
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#ifdef __cplusplus
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}
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#endif
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#endif
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